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Temperature and structure size dependence of the thermal conductivity of porous silicon

✍ Scribed by de Boor, J.; Kim, D. S.; Ao, X.; Hagen, D.; Cojocaru, A.; Föll, H.; Schmidt, V.

Book ID
120032436
Publisher
EDP Sciences
Year
2011
Tongue
English
Weight
551 KB
Volume
96
Category
Article
ISSN
0295-5075

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## Abstract Thermal carbonization of porous silicon (PS) at 820 °C under acetylene atmosphere is an appropriate method for humidity sensing purposes. It produces stable and hydrophilic surface still maintaining originally large specific surface area of PS. We report the temperature dependence of va