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Temperature dependent gap anisotropy from interlayer tunneling

โœ Scribed by V.N. Muthukumar; M. Sardar


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
374 KB
Volume
97
Category
Article
ISSN
0038-1098

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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1ร€x Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo