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Temperature dependence of the laser-induced Ga0 emission from a GaP(110) surface

✍ Scribed by Akiko Okano; Ken Hattori; Yasuo Nakai; Noriaki Itoh


Publisher
Elsevier Science
Year
1991
Weight
352 KB
Volume
258
Category
Article
ISSN
0167-2584

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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1Γ€x Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo