Temperature dependent exchange narrowing of line width in EPR on interacting donors in germanium and silicon
β Scribed by Kumar, Narendra ;Sinha, K. P.
- Book ID
- 105159888
- Publisher
- Springer-Verlag
- Year
- 1966
- Weight
- 230 KB
- Volume
- 197
- Category
- Article
- ISSN
- 0044-3328
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π SIMILAR VOLUMES
The results of a numerical calculation of the contribution of ligand superhyperfine interactions to the line width for the phosphorus donor electron in silicon are reported and show linear behavior at lower concentrations compared to deep centers. The linear dependence for the phosphorus center in s
## Abstract The change of the EPR line width, shape, and angular dependence of the halfwidth of Cr^3+^ ions in ZnWO~4~ is investigated in the temperature range from 4.2 to 1200 Β°K. It is shown that the EPR line broadening at high temperatures is due to the spinβphonon interaction. Twoβ and fourβpho