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Temperature dependent electrical transport in p-ZnO/n-Si heterojunction formed by pulsed laser deposition

✍ Scribed by Majumdar, S.; Banerji, P.


Book ID
120665363
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
562 KB
Volume
105
Category
Article
ISSN
0021-8979

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Electrical transport in strained MgxZn1βˆ’
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## Abstract Phosphorus‐doped Mg~__x__~Zn~1βˆ’__x__~O thin films with various Mg content (0.07 ≀ __x__ ≀ 0.28) and up to 0.7 at% P were grown on ZnO(000‐1) single crystals by pulsed laser deposition (PLD). In dependence on the dopant concentrations, tensile or compressively strained, in‐plane lattice