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Temperature dependence of tunnel conductance in ferromagnetic double barrier junctions

✍ Scribed by J. Inoue; A. Brataas; Yu.V. Nazarov; G.E.W. Bauer

Book ID
117219764
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
112 KB
Volume
438
Category
Article
ISSN
0039-6028

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ