The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) made with a semimagnetic semiconductor is studied theoretically. The calculated spin-polarized current and polarization degree are in agreement with recent experimental results. It is predicted that the pola
β¦ LIBER β¦
Spin-polarized tunneling in ferromagnetic double barrier junctions
β Scribed by A. Saffarzadeh
- Publisher
- Springer
- Year
- 2001
- Tongue
- English
- Weight
- 148 KB
- Volume
- 24
- Category
- Article
- ISSN
- 1434-6036
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