Spin-polarized current produced by a double barrier resonant tunneling diode

✍ Scribed by J.-B. Xia; G.-Q. Hai; J.N. Wang

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 126 KB
• Volume: 127
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(03)00451-4

✦ Synopsis

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) made with a semimagnetic semiconductor is studied theoretically. The calculated spin-polarized current and polarization degree are in agreement with recent experimental results. It is predicted that the polarization degree can be modulated continuously from þ1 to 21 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the Fermi level to the bottom of the conduction band. The RTD with low potential barrier or the tunneling through the second quasiconfined state produces larger spin-polarized current. Furthermore a higher magnetic field enhances the polarization degree of the tunneling current.