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Current fluctuation in double-barrier resonant-tunneling structures caused by scattering in electrodes

✍ Scribed by Akira Sugimura

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
550 KB
Volume
87
Category
Article
ISSN
0038-1098

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πŸ“œ SIMILAR VOLUMES

Hole localization effect on determinatio
Hole localization effect on determination of charge accumulation in double barrier resonant tunneling structures
✍ T.H. Wang; J.M. Zhou; Y. Huang; G.Z. Yang πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 130 KB

We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high q