CdGa2Se 4 thin films were prepared by vapour deposition onto either room temperature or preheated quartz and glass substrates (Ts) or they were deposited at room temperature and then annealed at about (TA) 623 K. The films thus prepared were crystalline with a thiogallate tetragonal structure. The o
Temperature dependence of the structural and optical properties of the amorphous-to-crystalline transition in CdGa2Se4 thin films
β Scribed by El-Sayad, E. A. ;Sakr, G. B.
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 300 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Optical transmittivity in the UV-VIS region of thermally evaporated amorphous As 2 S 3 , and As 2 Se 3 thin films was measured in the temperature region 15 K Ο½ T Υ 300 K: The temperature dependence of the optical gap E g T was found to be in agreement with Fan's one-phonon approximation or with Cody
Semiconductors Amorphous-to-crystalline Sb 2 Se 3 and Sb 2 Se 2 S films Optical properties a b s t r a c t Nearly stoichiometric thin films of Sb 2 Se 3 and Sb 2 Se 2 S were deposited, by conventional thermal evaporation of the presynthesized materials, on glass substrates held at room temperature.