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Temperature dependence of the effective mobility edge and recombination dynamics of free and localized excitons in InGaP/GaAs quantum wells

✍ Scribed by C. Rudamas; J. Martı&#x0301;nez-Pastor; L. González; A. Vinattieri; M. Colocci

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 70 KB
Volume: 17
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00774-9

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