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Temperature dependence of quantised resistance steps in electroformed metal–a-Si:H–metal structures

✍ Scribed by J. Hajto; B. Joo; B.J. Pendleton; A.E. Owen

Book ID
117149005
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
118 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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We have studied current-voltage (I-V ) characteristics of metal-on-tube metal-multiwall carbon nanotubemetal structures as a function of gate voltage. Device resistances ranged from about 10 kV to several MV, depending on the electrode metal and its deposition condition. When the resistance was much