## IN CON-ON with the note by Sato ,l I regret that my paper2 contains the erroneous conclusion that the temperature coefficient of the constant k, = (aq/aQ), (derived from the expressions of Sato and Coher? on the basis of the "place-exchange" mechanism of oxide-Mm growth) is zero. I cannot agre
Temperature dependence of passive film growth on iron at constant current
✍ Scribed by R.V. Moshtev
- Publisher
- Elsevier Science
- Year
- 1970
- Tongue
- English
- Weight
- 460 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0013-4686
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✦ Synopsis
The temperature dependence of anodic oxide growth on passive iron under steady-state galvonostatic conditions has been studied in the temperature range 1440°C. The activation energy of the ionic conduction process in y-FesOs is 1.39 eV. The temperature dependence of the field coefficient is linear but shows an intercept at zero l/T. The pre-exponential term is used to compute the mobile ion concentration, which is compared with values estimated from the crystal lattice data. The experimental value is practically equal to the cation vacancy concentration, but f?rm conclusions on the kind of activation control (internal or interfacial) are premature in view of the logarithmic accuracy. R-&Etude de l'influence de la tempbrature, dans un domaine compris entre 14-6O"C, sur la croissance de l'oxyde anodique sur du fer passif et dans des conditions galvanostatiques stationnaires. L'knergie d'activation pour le processus de conduction ionique dans y-FelOl est 1,39 eV. Le coefficient du champ depend linhirement de la temperature, mais avec un &art quand I/T tend vers 0. L.e terme pr&exponentiel est utilis6 pour le c&u1 de la concentration de l'ion mobile, qui est cornparke aux valeurs deduites des donn&s du r&au cristallin. La vabur exp&imentale est pratiquement kgale & la concentration du cation manquant, mais des conclusions d&nitives sur le genre de contrble de l'activation (inteme ou interfaciale) seraient pr&natur&s, compte-tenu de la p&&ion logarithmique.
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