Temperature dependence of mobility in PbS
β Scribed by F. M. El-akkad
- Publisher
- John Wiley and Sons
- Year
- 1968
- Tongue
- English
- Weight
- 124 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
## Abstract The influence of the nonβparabolicity of the valence band on the hole mobility in Si is investigated. The numerical and experimental results can be fitted if for the holes the nonβparabolicity of the energy spectrum as well as their scattering on acoustic and optical phonons are taken i
## Abstract Timeβdependent photocurrent transients are measured with vapour deposited amorphous tetracene layers as a function of temperature employing the technique of sensitized hole injection from a selenium layer. The time dependence is exponential and reflects trapping. The trapβfree mobility,