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Temperature dependence of interband recombination energy in symmetric (In,Ga)N spherical quantum dot-quantum well

✍ Scribed by El Ghazi, Haddou; Jorio, Anouar


Book ID
121359600
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
372 KB
Volume
432
Category
Article
ISSN
0921-4526

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Temperature dependence of the radiative
✍ G.W. 't Hooft; M.R. Leys; H.J. Talen-v.d. Mheen πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 281 KB

The temperature dependence of the radiative recombination coefficient of GaAs-(A1,Ga)As quantum wells grown by MO-VPE was investigated. This was done by measuring the minority carrier lifetime as deduced from photoluminescence decay. The experimental lifetime varies as Ta, where a equals 1.1 for sma