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Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior

✍ Scribed by Ahmari, D.A.; Raghavan, G.; Hartmann, Q.J.; Hattendorf, M.L.; Feng, M.; Stillman, G.E.


Book ID
114537664
Publisher
IEEE
Year
1999
Tongue
English
Weight
178 KB
Volume
46
Category
Article
ISSN
0018-9383

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## Abstract This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff a