Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

✍ Scribed by Afandiyeva, I.M.; Demirezen, S.; Altındal, Ş.

• Book ID: 120287766
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 528 KB
• Volume: 552
• Category: Article
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2012.11.093