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Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

✍ Scribed by Pässler, R.; Griebl, E.; Riepl, H.; Lautner, G.; Bauer, S.; Preis, H.; Gebhardt, W.; Buda, B.; As, D. J.; Schikora, D.; Lischka, K.; Papagelis, K.; Ves, S.

Book ID
120060182
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
380 KB
Volume
86
Category
Article
ISSN
0021-8979

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Temperature dependence of direct transition energies (E g ) was investigated in -FeSi 2 epitaxial films on Si(111) substrate. The lattice volume of the epitaxial films was reduced as the annealing temperature (T a ) increased. In photoreflectance measurements, the samples annealed at higher T a show