Temperature Dependence of Electron Beam Induced Epitaxial Crystallization of Silicon
✍ Scribed by Hoehl, D. ;Heera, V. ;Bartsch, H. ;Wollschläger, K. ;Skorupa, W. ;Voelskow, M.
- Book ID
- 105382362
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 154 KB
- Volume
- 122
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.
The damage to modulation-doped pseudomorphic SiGe channels was investigated for a typical 40 keV electron beam lithography resist technique and also a high resolution 300 keV direct write SiO2 patterning technique. Annealing studies on the irradiated samples were also performed. Results show that th
The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T