𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Temperature dependence of electron and hole mobilities in heavily impurity-doped SiGe single crystals

✍ Scribed by Yonenaga, I.; Li, W. J.; Akashi, T.; Ayuzawa, T.; Goto, T.

Book ID
120816963
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
498 KB
Volume
98
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Temperature dependence of hole drift mob
Temperature dependence of hole drift mobility in high-purity single-crystal CVD diamond
✍ Isberg, Jan ;Lindblom, Adam ;Tajani, Antonella ;Twitchen, Daniel πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 204 KB

## Abstract Hole transport properties in high‐purity single crystal CVD diamond samples were studied using the time of flight technique with optical excitation of the carriers. The measurements were taken at different temperatures in the interval 80–470 K. By varying the intensity of the optical ex