Temperature dependence of electrical resistivity of deformed and undeformed V-rich V3Si single crystals

✍ Scribed by W. Takahara; Y. Umakoshi; T. Yamane

• Publisher: Springer
• Year: 1993
• Tongue: English
• Weight: 299 KB
• Volume: 28
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00361181

✦ Synopsis

The electrical resistivity p (T) of V-rich V3Si single crystals (Tc-~ 11.4 K) was measured from 4.2 to 300 K along the directions of [1 00] and [1 1 1] before and after plastic deformation at 1 573 K. Anisotropy of p (T) was observed although V3Si has the cubic A15 structure. Plastic deformation does not affect the normal-state p (T) behaviour but changes the normalsuperconducting transition width ATc. At low temperatures (To < T <~ 40 K), p(T) varies approximately as T n where n-2.5 and this behaviour does not contradict the p (0)-X "phasediagram" plot proposed by Gurvitch, where X is the electron-phonon coupling constant and p (0) is the residual resistivity.