Temperature dependence of carrier lifetime in silicon power devices
β Scribed by Zimmermann, W.
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 141 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Abstract Timeβresolved pumpβprobe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10^18^ to 10^19^ cm^β3^. The observed decay time at 20 K is well explained by a dominating radiative interban
The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.