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Temperature dependence of carrier lifetime in silicon power devices

✍ Scribed by Zimmermann, W.


Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
141 KB
Volume
10
Category
Article
ISSN
0031-8965

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Temperature dependence of carrier lifeti
✍ Chen, Fei ;Cartwright, A. N. ;Lu, H. ;Schaff, W. J. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 74 KB

## Abstract Time‐resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10^18^ to 10^19^ cm^–3^. The observed decay time at 20 K is well explained by a dominating radiative interban

Temperature dependence of carrier transp
✍ J.Y. Lee; F.Y. Wang πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 512 KB

The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.