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Temperature dependence of carrier ionization rates and saturated velocities in silicon

โœ Scribed by D. R. Decker; C. N. Dunn


Book ID
112820087
Publisher
Springer US
Year
1975
Tongue
English
Weight
740 KB
Volume
4
Category
Article
ISSN
0361-5235

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๐Ÿ“œ SIMILAR VOLUMES


Temperature dependence of carrier transp
โœ J.Y. Lee; F.Y. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 512 KB

The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.