Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

✍ Scribed by A. Fontserè; A. Pérez-Tomás; M. Placidi; P. Fernández-Martínez; N. Baron; S. Chenot; Y. Cordier; J.C. Moreno; P.M. Gammon; M.R. Jennings

• Book ID: 113797872
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 750 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.06.015