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Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer

✍ Scribed by A. A. Shokri; A. Saffarzadeh

Book ID
111621265
Publisher
Springer
Year
2004
Tongue
English
Weight
261 KB
Volume
42
Category
Article
ISSN
1434-6036

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ