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Temperature and reconstruction dependence of the initial Al growth on GaAs(001)

โœ Scribed by G. Landgren; S.P. Svensson; T.G. Andersson


Book ID
104190966
Publisher
Elsevier Science
Year
1982
Weight
66 KB
Volume
122
Category
Article
ISSN
0167-2584

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A TEM investigation of the initial stage
โœ X Zhang; A.E Staton-Bevan; D.W Pashley ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 794 KB

## This investigation focuses attention on the very early stages of MBE growth of InSb on GaAs (001). Both conventional and high resolution TEA1 have been used to study InSb layers varying between 5 and 300 monolayers in average thickness. The observations provide conclusive evidence of three-dime