We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm a
β¦ LIBER β¦
Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs
β Scribed by Nathaniel A. Riordan, Chaturvedi Gogineni, Shane R. Johnson, Xianfeng Lu, Tom Tiedje, Ding Ding, Yong-Hang Zhang, Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz, Stephan W. Koch
- Book ID
- 118801561
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 399 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0957-4522
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