## Abstract In this article, we report on the theoretical analysis of transmission electron microscopy (TEM) images of surface InSb quantum dots (QDs) coherently grown on InAs substrate. A finite element method (FEM) is used to calculate elastic fields and total displacements in a QD and an adjuste
TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
✍ Scribed by Bert, N.A.; Nevedomsky, V.N.; Dement’ev, P.A.; Moiseev, K.D.
- Book ID
- 121787238
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 598 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The structural and the optical propertics of lnAs layers grown on high index GaAs surfaces by molecular beam epitaxy are investigated in order to understand the formation and the self-organization of quantum dots (Ql)s) on novel index surfaces. Four different GaAs substrate orientations have been ex
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum