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TEM Investigations of MBE Grown CaF2 Strained Layers on (111) Silicon

✍ Scribed by Draheim, D. ;Tempel, A. ;Zehe, A. ;Baither, D.

Book ID
105381986
Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
315 KB
Volume
119
Category
Article
ISSN
0031-8965

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## Abstract GaN nano‐ceramics were analyzed using transmission electron microscopy (TEM), showing that these ceramics are characterized by highly disoriented grains of the linear size of 100–150 nm. These GaN ceramics were used as substrates for GaN epitaxy in standard MOVPE conditions. For the com