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TEM Investigation of the annealing behaviour of Ne+-implanted silicon

✍ Scribed by Nabert, G. ;Habermeier, H.-U.


Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
317 KB
Volume
123
Category
Article
ISSN
0031-8965

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TEM investigation of Tm implanted GaN, t
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In this work we carry out characterization of GaN implanted with Tm ions by transmission electron microscopy. We have investigated samples implanted at room temperature with different energies (150-300 keV) and fluences (1 β€’ 10 14 -4.9 β€’ 10 15 Tm/cm 2 ). High temperature annealing was performed at 1