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TEM investigation of ion beam synthesized semiconducting FeSi2

✍ Scribed by Z. Yang; K.P. Homewood; K.J. Reeson; M.S. Finney; M.A. Harry


Book ID
119125467
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
646 KB
Volume
23
Category
Article
ISSN
0167-577X

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Ion beam synthesis of buried epitaxial F
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We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 Β°C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe