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Technological aspects of the preparation of Au-Zn ohmic contacts to p-type InP

✍ Scribed by Malina, V; Schade, U; Vogel, K


Book ID
120458875
Publisher
Institute of Physics
Year
1994
Tongue
English
Weight
352 KB
Volume
9
Category
Article
ISSN
0268-1242

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## Abstract P‐type ohmic contact between Au nanoparticles/ITO and p‐GaN during heat treatment is reported. Optimal conditions are selected to minimize the lowest specific contact resistance to 1.66 Γ— 10^–3^ Ξ© cm^2^, as determined by the transmission line model (TLM) after heat treatment process at