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Tailoring the I/V characteristics of a superlattice tunnel diode

✍ Scribed by Davies, R.A.; Kelly, M.J.; Kerr, T.M.


Book ID
118026617
Publisher
The Institution of Electrical Engineers
Year
1987
Tongue
English
Weight
495 KB
Volume
23
Category
Article
ISSN
0013-5194

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We calculate the IΒ±V characteristic of a tunnel junction containing resonant centers in the barrier distributed over a finite energy band and having an arbitrary location within the barrier. The onsite Coulomb interaction, U, between two electrons of opposite spin causes the IΒ±V characteristic to sh