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Taguchi method–ANN integration for predictive model of intrinsic stress in hydrogenated amorphous silicon film deposited by plasma enhanced chemical vapour deposition

✍ Scribed by Asafa, T.B.; Tabet, N.; Said, S.A.M.

Book ID
120431332
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
431 KB
Volume
106
Category
Article
ISSN
0925-2312

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