tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage
Synthetic, Structural and Spectroscopic Studies of Heteronuclear (Oxo)alkoxides as Precursors for Mixed Metal Oxides
β Scribed by Giovana G. Nunes; Dayane M. Reis; Pedro H. C. Camargo; Peter B. Hitchcock; Eduardo L. Sa; David J. Evans; Carlos J. da Cunha; Germano Tremiliosi-Filho; Aldo J. G. Zarbin; Jaisa F. Soares
- Publisher
- John Wiley and Sons
- Year
- 2007
- Weight
- 18 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0931-7597
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β¦ Synopsis
Abstract
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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.