𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Synthesis of thin carbon films on 4H-SiC by low temperature extraction of Si with HCl

✍ Scribed by M.A. Fanton; J.A. Robinson; M. Hollander; B.E. Weiland; K. Trumbull; M. LaBella


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
126 KB
Volume
48
Category
Article
ISSN
0008-6223

No coin nor oath required. For personal study only.

✦ Synopsis


PTFE particles hold the water droplets up and keep them from coming into contact with CNTs. More importantly, air in pores and between PTFE particles helps the surface achieve a great contact angle, much higher than that of water on plain PTFE films. When more PTFE particles are deposited onto the sample surface, a denser coating is produced with a reduced volume of air, leading to a decreased contact angle. However, because of these voids and air trapped in them, the contact angle of water on such a surface is always greater than that on plain PTFE films (Fig. 3).

The hot-pressed bulk CNT material, like graphite, can be machined into desired shapes with fine and complex channels. These results enable these internal surfaces of the tubes or channels to be super-hydrophobic, and the super-hydrophobility can be restored by repeating the procedure described above when damage occurs during use.


πŸ“œ SIMILAR VOLUMES


One-step synthesis of GaN thin films on
✍ K. Al-Heuseen; M.R. Hashim πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 616 KB

This paper reports the synthesis and characterization of GaN thin films deposited on Si (1 1 1) substrate, using electrochemical deposition technique below room temperature for different durations. The effects of deposition duration on the morphology, structure and optical properties of GaN thin fil

Ultra-high-vacuum chemical vapor deposit
✍ P.S. Chen; S.W. Lee; Y.H. Liu; M.H. Lee; M.-J. Tsai; C.W. Liu πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 359 KB

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1Γ€xΓ€y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1Γ€xΓ€y Ge x C y alloys have been grown at a temperature range from 550 to