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Synthesis of semi-insulating GaAs by As implantation and thermal annealing: structural and electrical properties

✍ Scribed by A. Claverie; H. Fujioka; L. Laânab; Z. Liliental-Weber; E.R. Weber

Book ID
113284940
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
559 KB
Volume
96
Category
Article
ISSN
0168-583X

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Semi-insulating GaAs made by As implanta
Semi-insulating GaAs made by As implantation and thermal annealing
✍ A. Claverie; F. Namavar; Z. Liliental-Weber; P. Dreszer; E.R. Weber 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 529 KB

We have demonstrated that it is possible to regrow amorphous layers created by high dose As implantation in GaAs by thermal annealing in order to obtain arsenic precipitates distributed in a GaAs matrix similarly to that observed in low temperature GaAs. The characteristics of the As precipitates ca