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Synthesis of GaN phase by ion implantation

✍ Scribed by Vikas Baranwal; Richa Krishna; Fouran Singh; Ambuj Tripathi; Avinash C. Pandey; Dinakar Kanjilal


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
152 KB
Volume
253
Category
Article
ISSN
0169-4332

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We use molecular dynamics (MD) simulations to study the effect of the implantation angle on the damage produced during ion beam irradiation of GaN. We bombard 5 keV Er ions at perfect wurtzite GaN with incident angles of 0 β€’ -22 β€’ angle against the [0 0 0 1] crystal axis. The simulations reproduce t