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Raman characterization of Ar+ ion-implanted GaN

✍ Scribed by B. Boudart; Y. Guhel; J. C. Pesant; P. Dhamelincourt; M. A. Poisson


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
140 KB
Volume
33
Category
Article
ISSN
0377-0486

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As-grown highly resistive (>10 7 W cm) GaN samples were exposed to implantation of 24 Mg + ions with the energy of 120 keV and dose of 2 Γ‚ 10 14 cm --2 . Isochronal rapid thermal annealing (RTA) was carried out for the Mg-implanted samples at 850, 950 and 1050 C, respectively. Under z(x, x)z 0 backs