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Synthesis of buried silicon oxide layers by water plasma immersion implantation

✍ Scribed by I. Großhans; K. Volz; W. Ensinger; B. Rauschenbach


Book ID
114171452
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
378 KB
Volume
155
Category
Article
ISSN
0168-583X

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Synthesis of buried silicon oxynitride l
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Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 • 10 17 , 2.5 • 10 17 and 5 • 10 17 ions cm À2 sequentially in the ratio 1:1 at 150 keV into p-type