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Synthesis and properties of a new, branched polyhydridocarbosilane as a precursor for silicon carbide

โœ Scribed by Peter E. Froehling


Book ID
104886160
Publisher
Springer
Year
1993
Tongue
English
Weight
374 KB
Volume
3
Category
Article
ISSN
1053-0495

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Silicon carbide whiskers exhibit growth predominantly in the h1 1 1i direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elemen