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Synthesis and optoelectronic properties of p-type nitrogen doped ZnSe nanobelts

โœ Scribed by Qing Su; Lijuan Li; Shanying Li; Haipeng Zhao

Book ID
119323074
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
657 KB
Volume
92
Category
Article
ISSN
0167-577X

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## Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N, metastables in the A3C: state. The free-hole concentration of N-doped ZnSe is of the order of 10" cm-j at room temperature. Laser diode ac