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Synthesies and properties of Tb-doped GaN nanowires

✍ Scribed by Y. P. Cao; F. Shi; X. W. Xiu; H. B. Sun; Y. F. Guo; W. J. Liu; Chengshan Xue

Book ID
110166865
Publisher
SP MAIK Nauka/Interperiodica
Year
2010
Tongue
English
Weight
334 KB
Volume
46
Category
Article
ISSN
0020-1685

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## Abstract For Abstract see ChemInform Abstract in Full Text.

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## Abstract We demonstrate bulk synthesis of single‐crystal Pb‐doped ZnO nanowires by using (Pb(NO~3~)~2~ + Zn) powders at 450 Β°C. These mass nanowires are characterized by X‐ray diffraction, scanning electron microscopy, energy dispersive X‐ray spectroscopy, transmission electron microscopy (TEM),