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Synchrotron radiation studies of III–V semiconductors

✍ Scribed by N. G. Alexandropoulos

Book ID
112981748
Publisher
Springer-Verlag
Year
1994
Tongue
English
Weight
31 KB
Volume
74
Category
Article
ISSN
1219-7580

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## Abstract GaAs crystals and Al~0.43~Ga~0.57~As epitaxial layers of low dislocation density were implanted with 146 keV, 100 keV and 60 keV H^+^ ions and studied by recording of rocking curves, reciprocal space mapping and Bragg‐type section topography. The X‐ray investigation were performed also