Symmetry of electronic states in antiferromagnets; applications to CuO2 planes

✍ Scribed by S. Brazovskii; I. Luk'yanchuk

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 231 KB
• Volume: 185-189
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/0921-4534(91)90918-o

✦ Synopsis

The symmetry analysis of electronic states in antiferromagnetic phase is applied to Cu02plane of High-To materials. The various allowed states are analyzed for characteristic points at the magnetic Brillouin zone boundary. The results show the way to discriminate experimentally between the two main hypothesis for the nature of carriers: p--d hybridization versus oxygen picture, Mott-Hubbard gap versus charge transfer gap.

We will apply the symmetry methods to describe electronic properties of dielectrical or dopped Antiferromagnetic (AFM) phase for the square lattice of CuOz layer of the High-T¢ parent materials. We'll give dassiilcation of electronic states for various points of the Magnetic BriUouin Zone which is a half of BZ in a norreal metal due to AFM doubling period. (See Fig.