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Electronic structure and hole distribution in CuO2 plane of HTSC

โœ Scribed by L. Adamowicz; A. Pondo

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
384 KB
Volume
192
Category
Article
ISSN
0921-4534

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โœฆ Synopsis

The extended three-band Hubbard model has been used to calculate the population of Cu and O atomic sites by the dopinginduced holes. Total and projected partial densities of states were examined for a wide range of model parameters. Strong enhancement of the density of states near the Fermi level has been obtained. The localization of holes on Cu sites is connected with the increase of mobile holes which accumulate mainly on O sites.

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