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Switching speed and power dissipation of planar-type Gunn diodes

✍ Scribed by M. Nakamura; H. Kurono; T. Toyabe; M. Hirao; H. Kodera


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
583 KB
Volume
16
Category
Article
ISSN
0038-1101

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## Abstract Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double δ‐doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when d