Content:
Inside Back Cover, Page iv
Front Matter, Page v
Copyright, Page vi
PREFACE, Pages vii-viii, A. Frova, E. Tosatti
INTRODUCTION, Pages ix-xi, Robert S. Bauer
ELECTRONIC PROPERTIES AND SURFACE GEOMETRY OF GaAs AND ZnO SURFACES, Pages 1-21, K. JACOBI
ELECTRONIC STRUCTURE OF Si(111) SURFACES, Pages 22-30, F.J. HIMPSEL, Th. FAUSTER, G. HOLLINGER
PHOTOEMISSION STUDIES OF SURFACE STATES ON Si(111) 2 × 1, Pages 31-39, G.V. HANSSON, R.I.G. UHRBERG, J.M. NICHOLLS
Si(111) 2 × 1 STUDIES BY ANGLE RESOLVED PHOTOEMISSION, Pages 40-45, F. HOUZAY, G. GUICHAR, R. PINCHAUX, G. JEZEQUEL, F. SOLAL, A. BARSKY, P. STEINER, Y. PETROFF
THE π-BONDED CHAIN-MODEL FOR Si(111)-(2 × 1) IN VIEW OF RECENT WAVEVECTOR-RESOLVED ELECTRON ENERGY LOSS SPECTRA, Pages 46-48, H. LÜTH, A. RITZ, R. MATZ
THE MOTT INSULATOR MODEL OF THE Si(111)-(2 × 1) SURFACE, Pages 49-61, Antonio REDONDO, William A. GODDARD III, T.C. McGILL
ELECTRONIC SURFACE STATES AT STEPS IN Si(111) 2 × 1, Pages 62-67, P. CHIARADIA, G. CHIAROTTI, S. SELCI, ZHU Zhi-Ji
A NOVEL METHOD FOR THE STUDY OF OPTICAL PROPERTIES OF SURFACES, Pages 68-72, Nabil M. AMER, Marjorie A. OLMSTEAD
LOW TEMPERATURE LEED AND ELECTRIC CONDUCTIVITY MEASUREMENTS FOR CLEAVED Si(111) SURFACES, Pages 73-81, V.Yu. ARISTOV, I.E. BATOV, V.A. GRAZHULIS
SPOT PROFILE ANALYSIS (LEED) OF DEFECTS AT SILICON SURFACES, Pages 82-91, M. HENZLER
CHEMISORPTION-INDUCED DEFECTS AT INTERFACES ON COMPOUND SEMICONDUCTORS, Pages 92-121, W. MÖNCH
SURFACE DEFECTS ON SEMICONDUCTORS, Pages 122-142, R.H. WILLIAMS
THE FORMATION OF INTERFACES ON GaAs AND RELATED SEMICONDUCTORS: A REASSESSMENT, Pages 143-168, R. LUDEKE
PHYSICS AND ELECTRONICS OF THE NOBLE-METAL/ELEMENTAL-SEMICONDUCTOR INTERFACE FORMATION: A STATUS REPORT, Pages 169-204, G. LE LAY
LOCAL STRUCTURE OF ADSORBATES ON SEMICONDUCTOR SURFACES USING SEXAFS: A BRIEF SUMMARY, Pages 205-211, P.H. CITRIN, J.E. ROWE
SYSTEMATICS OF CHEMICAL STRUCTURE AND SCHOTTKY BARRIERS AT COMPOUND SEMICONDUCTOR–METAL INTERFACES, Pages 212-232, L.J. BRILLSON, C.F. BRUCKER, A.D. KATNANI, N.G. STOFFEL, R. DANIELS, G. MARGARITONDO
SCHOTTKY BARRIERS: MODELS AND “TESTS”, Pages 233-249, J.L. FREEOUF
SCHOTTKY BARRIER AMORPHOUS–CRYSTALLINE INTERFACE FORMATION, Pages 250-263, Malcolm J. THOMPSON, Robert J. NEMANICH, Chuang Chuang TSAI
COMPUTER MODELLING OF HIGH BARRIER SCHOTTKY DIODES APPLIED TO STUDY OF THE ACCURACY OF EXPERIMENTAL BARRIER DETERMINATION, Pages 264-267, P.A. TOVE, K. BOHLIN, H. NORDE
MICROSCOPIC PROPERTIES AND BEHAVIOR OF SILICIDE INTERFACES, Pages 268-314, Gary W. RUBLOFF
THE ELECTRON STATES IN THE Si(111)–Pd INTERFACE: TOWARDS A REASSESSMENT OF THE EXPERIMENTAL INFORMATION, Pages 315-323, L. BRAICOVICH
Si–Cr AND Si–Pd INTERFACE REACTION AND BULK ELECTRONIC STRUCTURE OF Ti, V, Cr, Co, Ni, AND Pd SILICIDES, Pages 324-335, A. FRANCIOSI, J.H. WEAVER
SIMPLE DIPOLE MODEL FOR BARRIER HEIGHTS OF SILICIDE–SILICON AND METAL–SILICON BARRIERS, Pages 336-343, P.A. TOVE
FAR FROM EQUILIBRIUM VAPOUR PHASE GROWTH OF LATTICE MATCHED III–V COMPOUND SEMICONDUCTOR INTERFACES: SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER SIMULATIONS, Pages 344-374, A. MADHUKAR
GROWTH AND DOPING OF GALLIUM ARSENIDE USING MOLECULAR BEAM EPITAXY (MBE): THERMODYNAMIC AND KINETIC ASPECTS, Pages 375-389, R. HECKINGBOTTOM, G.J. DAVIES, K.A. PRIOR
SURFACE FERMI LEVEL OF III–V COMPOUND SEMICONDUCTOR–DIELECTRIC INTERFACES, Pages 390-405, H.H. WIEDER
RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES, Pages 406-421, D.E. ASPNES
INTERFACE STATES AT THE SiO2–Si INTERFACE, Pages 422-455, M. SCHULZ
DIPOLES, DEFECTS AND INTERFACES, Pages 456-464, A. ZUR, T.C. McGILL, D.L. SMITH
TRAPS AT INTERFACES BETWEEN GaAs n-TYPE LPE LAYERS AND DIFFERENT SUBSTRATES, Pages 465-468, J. BASTON, F.-J. TEGUDE, K. HEIME
THE HETEROJUNCTION PARAMETERS FROM A MICROSCOPIC POINT OF VIEW, Pages 469-478, G. MARGARITONDO
ON THE ADJUSTABILITY OF THE “ABRUPT” HETEROJUNCTION BAND-GAP DISCONTINUITY, Pages 479-504, Robert S. BAUER, Henry W. SANG Jr.
EFFECT OF TEMPERATURE ON THE Ge/GaAs(110) INTERFACE FORMATION, Pages 505-512, Ping CHEN, D. BOLMONT, C.A. SÉBENNE
VALENCE-BAND DISCONTINUITIES FOR ABRUPT (110), (100), AND (111) ORIENTED Ge–GaAs HETEROJUNCTIONS, Pages 513-518, J.R. WALDROP, E.A. KRAUT, S.P. KOWALCZYK, R.W. GRANT
ELECTRON MOBILITIES IN MODULATION-DOPED GaAs–(AlGa)As HETEROSTRUCTURES, Pages 519-526, H.L. STÖRMER
NEW DEVICE APPLICATIONS OF BANDEDGE DISCONTINUITIES IN MULTILAYER HETEROJUNCTION STRUCTURES, Pages 527-539, Federico CAPASSO
SEMICONDUCTORS WITH HETERO-n–i–p–i SUPERLATTICES, Pages 540-542, P. RUDEN, G.H. DÖHLER
HETEROSTRUCTURE DEVICES: A DEVICE PHYSICIST LOOKS AT INTERFACES, Pages 543-576, Herbert KROEMER
CARRIER CONFINEMENT EFFECTS, Pages 577-593, Peter J. PRICE, Frank STERN
THE ROLE OF BOUNDARIES ON HIGH SPEED COMPOUND SEMICONDUCTOR DEVICES, Pages 594-622, H.L. GRUBIN, J.P. KRESKOVSKY
INJECTION DEPENDENCE OF QUASIBALLISTIC TRANSPORT IN GaAs AT 77 K, Pages 623-636, P. HESTO
AUTHOR INDEX, Pages 637-639
SUBJECT INDEX, Pages 640-644