✦ LIBER ✦

Surface stoichiometry variation in alternate molecular beam epitaxy of GaAs

✍ Scribed by C. Deparis; J. Massies

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 919 KB
Volume: 118
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(92)90090-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface processes in metalorganic molecu

Surface processes in metalorganic molecular beam epitaxial growth of GaAs

✍ M. Uneta; Y. Watanabe; Y. Ohmachi 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 971 KB

Characterization of surface faceting on

Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy

✍ L.T.P. Allen; E.R. Weber; J. Washburn; Y.C. Pao; A.G. Elliot 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 695 KB

Low-temperature selective growth of GaAs

Low-temperature selective growth of GaAs by alternately supplying molecular beam epitaxy

✍ S. Yokoyama; J. Oogi; D. Yui; M. Kawabe 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 259 KB

Nanostructures in GaAs fabricated by mol

Nanostructures in GaAs fabricated by molecular beam epitaxy

✍ Loren N. Pfeiffer; Kenneth W. West; Robert L. Willett; Hidefumi Akiyama; Leonid 📂 Article 📅 2005 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 218 KB

Surface structures and photoluminescence

Surface structures and photoluminescence of molecular beam epitaxial films of GaAs

✍ A.Y. Cho; I. Hayashi 📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 670 KB

A correlation between surface morphology

A correlation between surface morphology and RHEED intensity variation for growth of GaAs by molecular beam epitaxy

✍ M.V. Baeta Moreira; M.A. Py; E. Tuncel 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 999 KB