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Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide

✍ Scribed by Rittenhouse, Tilghman L.


Book ID
120433579
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
725 KB
Volume
95
Category
Article
ISSN
0021-8979

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## Abstract Different homo epitaxial 4H‐SiC commercial wafers were undergone hydrogen etching process that was developed in the reaction chamber of a Hot Wall Chemical Vapor Deposition (HWCVD) reactor. We have studied the effects of physical desorption to point out the morphology and the structural